MPSA05 npn plastic encapsulated transistor elektronische bauelemente 1-jul-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 2 base 3 collector emitter 1 rohs compliant product a suffix of -c specifies halogen & lead-free features general purpose amplifier absolute maximum ratings (t a =25c unless otherwise noted) parameter symbol rating unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 60 v emitter to base voltage v ebo 4 v collector current - continuous i c 0.5 a collector power dissipation p c 625 mw thermal resistance from junction to ambient r ja 200 c/w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 60 - - v i c =100 a, i e =0 collector to emitter breakdown voltage v (br)ceo 60 - - v i c =1ma, i b =0 emitter to base breakdown voltage v (br)ebo 4 - - v i e =100 a, i c =0 collector cut-off current i cbo - - 0.1 a v cb =60 v, i e =0 collector cut-off current i ceo - - 0.1 a v ce =60v, i b =0 emitter cut-off current i ebo - - 1 a v eb =3v, i c =0 dc current gain h fe (1) 100 - - v ce =1v, i c =100ma h fe (2) 100 - - v ce =1v, i c =10ma collector to emitter saturation voltage v ce(sat) - - 0.25 v i c =100ma, i b =10ma base to emitter voltage v be(sat) - - 1.2 v i c =100ma, v ce =1v transition frequency f t 100 - - mhz v ce =2v, i c =10ma, f=100mhz to - 92 a c e f d g h j b 1 11 1 emitter 2 22 2 base 3 33 3 collector ref. millim eter ref. millimeter min. max. min. max. a 4.40 4.70 f 0.30 0.51 b 4.30 4.70 g 1.27 typ. c 12.70 - h 1. 10 1.40 d 3.30 3.81 j 2.42 2.66 e 0.36 0.56 k 0.36 0.76
|
